Structure analysis of a buried interface between organic and porous inorganic layers using spin-contrast-variation neutron reflectivity

Kumada, Takayuki; Miura, Daisuke*; Akutsu, Kazuhiro*; Oishi, Kazuki*; Morikawa, Toshiaki*; Kawamura, Yukihiko*; Suzuki, Junichi*; Oku, Takayuki; Torikai, Naoya*; Niizeki, Tomotake*

Journal of Applied Crystallography, 55(5), p.1147 - 1153, 2022/10

AA2021-0903.pdf:1.06MB

https://doi.org/10.1107/S1600576722007506

Spin-contrast-variation neutron reflectivity obtains multiple reflectivity curves from a single sample and a single beam source. We used the strong point of the technique to reveal that, although methylated-perhydropolysilazane-derived silica layer has a higher porosity near the interface with acrylic urethane resin, the resin did not permeate the pore network.

Materials investigation by synchrotron radiation

Mizuki, Junichiro

Kagaku Kogyo, 49(7), p.33 - 41, 1998/07

https://ci.nii.ac.jp/naid/40000415360

no abstracts in English

Reliability issues in Nitrided SiC MOS devices

Kobayashi, Takuma*; Nakanuma, Takato*; Suzuki, Asato*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, , 

We investigated the reliability of nitrided SiC MOS devices in terms of oxide leakage and flatband voltage stability. Although nitrided MOS devices on non-basal planes are known to have superior on-state performances, we found that the nitridation not only leads to pronounced oxide leakage but also hampers the flatband voltage stability in response to electron and hole injection. In the presentation, we will show how the nitridation modifies the MOS interfaces based on the results of synchrotron radiation X-ray photoelectron spectroscopy and discuss the possible cause of reliability degradation.